IS41LV16100B-50TL

IS41LV16100B-50TL

IS41LV16100B-50TL

  • Available: 351
  • Manufacturer: ISSI, Integrated Silicon Solution Inc
  • Part Number: IS41LV16100B-50TL
  • Detailed Description: DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25 ns 44-TSOP II
  • Category: Integrated Circuits (ICs) | Memory - Memory
  • RoHS Status: ROHS3 Compliant
  • Datasheet: Datasheet
Reference Price (USD)
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Considering price fluctuations, this price is only for reference. Please send RFQ to [email protected] to get the best price, thank you.

Product Specifications

Manufacturer ISSI, Integrated Silicon Solution Inc
Series -
Package -
Standard Package 117
Product Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology DRAM - EDO
Memory Size 16Mb (1M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page -
Access Time 25 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400" | 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number IS41LV16100

Environmental & Export

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0002

How to Buy

Process Submit enquiry>Confirm offer>Send order>Complete payment >Delivery
Payment TT, PayPal, Escrow, more please consult our account manager.
Delivery period For in-stock parts, orders are estimated to ship out in 3 days.
Shipping option We provide DHL, FedEx, UPS for international transportation.
Shipping tracking Orders are shipped and we will notify you of the tracking number by email.
Warranty Cytech Systems provide 6 months quality risk guarantee. If you find that the quality of the product does not match the original technical parameters during the use of the product, we will assume responsibility for the quality risk within 6 months.
This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.

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